All Faculty and Research Staff Publications

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2002
Chu RM, Zheng YD, Zhou YG, Han P, Shen B, Gu SL. Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors. Applied Physics a-Materials Science & ProcessingApplied Physics a (Materials Science Processing). 2002 ;75:387-389.
Shi Y, Shen B, Bu HM, Yuan XL, Gu SL, Han P, Zhang R, Zheng YD. Investigation of switching kinetics of interface traps in metal-oxide-semiconductor-field-effect-transistors with ultra-narrow channels. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review PapersJapanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers. 2002 ;41:2363-2366.