All Faculty and Research Staff Publications

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Kim H, Colavita PE, Metz KM, Nichols BM, Sun B, Uhlrich J, Wang XY, Kuech TF, Hamers RJ. Photochemical functionalization of gallium nitride thin films with molecular and biomolecular layers. Langmuir. 2006 ;22:8121-8126.
Kim H, Forghani K, Guan Y, Luo G, Anand A, Morgan D, Kuech TF, Mawst LJ, Lingley ZR, Foran BJ, et al. Strain-compensated GaAs1-yPy/GaAs1-zBiz/GaAs1-yPy quantum wells for laser applications. Semiconductor Science and Technology. 2015 ;30.
Kim H, Forghani K, Guan Y, Kim K, Wood AW, Lee J, Babcock SE, Kuech TF, Mawst LJ. Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics. Journal of Crystal Growth. 2016 ;452:276-280.
Kim H, Guan YX, Forghani K, Kuech TF, Mawst LJ. Laser diodes employing GaAs1-xBix/GaAs1-yPy quantum well active regions. Semiconductor Science and Technology. 2017 ;32.
Kim H, Guan YX, Babcock SE, Kuech TF, Mawst LJ. Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing. Journal of Applied Physics. 2018 ;123.
Kim H, Kim K, Guan YX, Lee J, Kuech TF, Mawst LJ. Single junction solar cell employing strain compensated GaAs0.965Bi0.035/GaAs0.75P0.25 multiple quantum wells grown by metal organic vapor phase epitaxy. Applied Physics Letters. 2018 ;112.
Kim H, Choi J, Lingley Z, Brodie M, Sin Y, Kuech TF, Gopalan P, Mawst LJ. Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning. Journal of Crystal Growth. 2017 ;465:48-54.
Kim H, Wei W, Kuech TF, Gopalan P, Mawst LJ. Impact of InGaAs carrier collection quantum well on the performance of. Semiconductor Science and Technology. 2019 ;34:025012.
Kim H, Guan YX, Kuech TF, Mawst LJ. Impact of thermal annealing on internal device parameters of GaAs0.965Bi0.035/GaAs0.75P0.25 quantum well lasers. Iet Optoelectronics. 2019 ;13:12-16.
Kim H, Shi B, Lingley Z, Li Q, Rajeev A, Brodie M, Lau KM, Kuech TF, Sin Y, Mawst LJ. Electrically injected 1.64 mu m emitting In0.65Ga0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE. Optics Express. 2019 ;27:33205-33216.