All Faculty and Research Staff Publications

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1990
Lebens JA, Tsai CS, Vahala KJ, Kuech TF. APPLICATION OF SELECTIVE EPITAXY TO FABRICATION OF NANOMETER SCALE WIRE AND DOT STRUCTURES. Applied Physics Letters. 1990 ;56:2642-2644.
Buchan NI, Kuech TF, Scilla G, Cardone F, Potemski R. CARBON INCORPORATION IN METAL-ORGANIC VAPOR-PHASE EPITAXY GROWN GAAS FROM CHXI4-X, HI, AND I2. Journal of Electronic Materials. 1990 ;19:277-281.
Kuech TF, Collins RT, Smith DL, Mailhiot C. FIELD-EFFECT TRANSISTOR STRUCTURE BASED ON STRAIN-INDUCED POLARIZATION CHARGES. Journal of Applied Physics. 1990 ;67:2650-2652.
Kuech TF, Segmuller A, Kuan TS, Goorsky MS. GROWTH AND PROPERTIES OF THIN GAAS EPITAXIAL LAYERS ON AL2O3. Journal of Applied Physics. 1990 ;67:6497-6506.
Han CC, Wang XZ, Wang LC, Marshall ED, Lau SS, Schwarz SA, Palmstrom CJ, Harbison JP, Florez LT, Potemski RM, et al. NONSPIKING OHMIC CONTACT TO P-GAAS BY SOLID-PHASE REGROWTH. Journal of Applied Physics. 1990 ;68:5714-5718.
Palevski A, Solomon P, Kuech TF, Tischler MA. REGROWN OHMIC CONTACTS TO THIN GAAS-LAYERS AND 2-DIMENSIONAL ELECTRON-GAS. Applied Physics Letters. 1990 ;56:171-173.
Kuech TF, Tischler MA, Buchan NI, Potemski R. SELECTIVE EPITAXY OF MOVPE GAAS USING DIETHYL GALLIUM CHLORIDE. Journal of Crystal Growth. 1990 ;99:324-328.
Palevski A, Solomon PM, Kuech TF, Tischler M, Umbach C. SELECTIVELY REGROWN CONTACTS TO FIELD-EFFECT TRANSISTORS WITH 2-DIMENSIONAL ELECTRON-GAS CHANNELS. IEEE Electron Device Letters. 1990 ;11:535-537.
Wang LC, Wang XZ, Lau SS, Sands T, Chan WK, Kuech TF. STABLE AND SHALLOW PDLN OHMIC CONTACTS TO N-GAAS. Applied Physics Letters. 1990 ;56:2129-2131.
Kaufmann U, Wilkening W, Mooney PM, Kuech TF. STRAIN SPLITTING OF THE X-CONDUCTION-BAND VALLEYS AND QUENCHING OF SPIN-VALLEY INTERACTION IN INDIRECT GAAS/ALXGA1-XAS-SI HETEROSTRUCTURES. Physical Review B. 1990 ;41:10206-10209.
Kuech TF. THIN-LAYER FORMATION - PREFACE. Ibm Journal of Research and Development. 1990 ;34:794-794.
1989
Venkatasubramanian R, Ghandhi SK, Kuech TF. COMPENSATION MECHANISMS IN N+-GAAS DOPED WITH SULFUR. Journal of Crystal Growth. 1989 ;97:827-832.
Kuech TF, Tischler MA, Potemski R, Cardone F, Scilla G. DOPING AND DOPANT BEHAVIOR IN (AL,GA)AS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Crystal Growth. 1989 ;98:174-187.
Tischler MA, Kuech TF, Palevski A, Solomon P. ELECTRICAL CHARACTERISTICS OF REGROWN INTERFACES USING DIETHYLGALLIUM CHLORIDE-BASED METALORGANIC VAPOR-PHASE EPITAXY. Applied Physics Letters. 1989 ;55:2214-2216.
Tischler MA, Baratte H, Kuech TF, Wang PJ. ELECTRICAL CHARACTERIZATION OF GAAS/AL0.30GA0.70ASP+-N HETEROJUNCTIONS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Applied Physics. 1989 ;65:4928-4935.
Mooney PM, Wilkening W, Kaufmann U, Kuech TF. ELECTRON-PARAMAGNETIC-RESONANCE MEASUREMENTS OF SI-DONOR-RELATED LEVELS IN ALXGA1-XAS. Physical Review B. 1989 ;39:5554-5557.
Marshall ED, Yu LS, Lau SS, Kuech TF, Kavanagh KL. PLANAR GE PD AND ALLOYED AU-GE-NI OHMIC CONTACTS TO N-ALXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.3). Applied Physics Letters. 1989 ;54:721-723.
Yu ML, Memmert U, Kuech TF. REACTION OF TRIMETHYLGALLIUM IN THE ATOMIC LAYER EPITAXY OF GAAS(100). Applied Physics Letters. 1989 ;55:1011-1013.
Kuech TF, Tischler MA, Potemski R. SELECTIVE EPITAXY IN THE CONVENTIONAL METALORGANIC VAPOR-PHASE EPITAXY OF GAAS. Applied Physics Letters. 1989 ;54:910-912.
Yu LS, Wang LC, Marshall ED, Lau SS, Kuech TF. THE TEMPERATURE-DEPENDENCE OF CONTACT RESISTIVITY OF THE GE PD AND THE SI PD NONALLOYED CONTACT SCHEME ON N-GAAS. Journal of Applied Physics. 1989 ;65:1621-1625.
Masselink WT, Kuech TF. VELOCITY-FIELD CHARACTERISTICS OF ELECTRONS IN DOPED GAAS. Journal of Electronic Materials. 1989 ;18:579-584.
1988
Steiner TW, Wolford DJ, Kuech TF, Jaros M. AUGER DECAY OF X-POINT EXCITONS IN A TYPE-II GAAS/ALGAAS SUPERLATTICE. Superlattices and Microstructures. 1988 ;4:227-232.
Kuech TF, Wang PJ, Tischler MA, Potemski R, Scilla GJ, Cardone F. THE CONTROL AND MODELING OF DOPING PROFILES AND TRANSIENTS IN MOVPE GROWTH. Journal of Crystal Growth. 1988 ;93:624-630.
Kuech TF, Tischler MA, Wang PJ, Scilla G, Potemski R, Cardone F. CONTROLLED CARBON DOPING OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY. Applied Physics Letters. 1988 ;53:1317-1319.
Wang PJ, Kuech TF, Tischler MA, Mooney PM, Scilla GJ, Cardone F. DEEP LEVELS AND MINORITY-CARRIER LIFETIME IN MOVPE P-TYPE GAAS. Journal of Crystal Growth. 1988 ;93:569-575.
Wang PJ, Kuech TF, Tischler MA, Mooney P, Scilla G, Cardone F. DEEP LEVELS IN PARA-TYPE GAAS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY. Journal of Applied Physics. 1988 ;64:4975-4986.
Wolford DJ, Kuech TF, Steiner TW, Bradley JA, Gell MA, Ninno D, Jaros M. ELECTRONIC-STRUCTURE OF QUANTUM-WELL STATES REVEALED UNDER HIGH-PRESSURES. Superlattices and Microstructures. 1988 ;4:525-535.
Kern DP, Kuech TF, Oprysko MM, Wagner A, Eastman DE. FUTURE BEAM-CONTROLLED PROCESSING TECHNOLOGIES FOR MICROELECTRONICS. Science. 1988 ;241:936-944.
Moffat HK, Kuech TF, Jensen KF, Wang PJ. Gas-Phase and Surface-Reactions in Si Doping of Gaas by Silanes. Journal of Crystal Growth. 1988 ;93:594-601.
Scilla GJ, Kuech TF, Cardone F. IMPROVED DETECTION OF CARBON IN GAAS BY SECONDARY ION MASS-SPECTROSCOPY - THE INFLUENCE OF HYDROCARBONS IN METALORGANIC VAPOR-PHASE EPITAXY. Applied Physics Letters. 1988 ;52:1704-1706.
Tischler MA, Baratte H, Kuech TF, Wang PJ. THE INFLUENCE OF GROWTH-CONDITIONS ON THE ELECTRICAL-PROPERTIES OF GAAS/AL0.30GA0.70ASP+/N HETEROJUNCTIONS. Journal of Crystal Growth. 1988 ;93:631-636.
Kuech TF, Scilla GJ, Cardone F. THE INFLUENCE OF HYDROCARBONS IN MOVPE GAAS GROWTH - IMPROVED DETECTION OF CARBON BY SECONDARY ION MASS-SPECTROSCOPY. Journal of Crystal Growth. 1988 ;93:550-556.
Kash JA, Hvam JM, Tsang JC, Kuech TF. LOCALIZATION AND WAVE-VECTOR CONSERVATION FOR OPTICAL PHONONS IN ALXGA1-XAS AND THIN-LAYERS OF GAAS. Physical Review B. 1988 ;38:5776-5779.
Pan SH, Shen H, Hang Z, Pollak FH, Kuech TF, Lee JC, Schlesinger TE, Shahid MA. PHOTOREFLECTANCE, RAMAN-SCATTERING, PHOTOLUMINESCENCE AND TRANSMISSION ELECTRON-MICROSCOPY OF MOCVD GAAS/GAALAS MULTIPLE QUANTUM WELLS. Superlattices and Microstructures. 1988 ;4:609-617.

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