All Faculty and Research Staff Publications

Export 23 results:
Filters: Author is Tischler, M. A.  [Clear All Filters]
1991
Tischler MA, Potemski RM, Kuech TF, Cardone F, Goorsky MS, Scilla G. ACCEPTOR DOPING OF (AL,GA)AS USING CARBON BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Crystal Growth. 1991 ;107:268-273.
Goorsky MS, Kuech TF, Tischler MA, Potemski RM. DETERMINATION OF EPITAXIAL ALXGA1-XAS COMPOSITION FROM X-RAY-DIFFRACTION MEASUREMENTS. Applied Physics Letters. 1991 ;59:2269-2271.
Buchan NI, Kuech TF, Tischler MA, Scilla G, Cardone F, Potemski R. EPITAXIAL-GROWTH OF GAAS WITH (C2H5)2GACL AND ASH3 IN A HOTWALL REACTOR. Journal of the Electrochemical Society. 1991 ;138:2789-2794.
Buchan NI, Kuech TF, Tischler MA, Potemski R. EPITAXIAL-GROWTH OF GAAS WITH (C2H5)2GACL AND ASH3 IN A HOT-WALL SYSTEM. Journal of Crystal Growth. 1991 ;107:331-336.
Kuech TF, Goorsky MS, Tischler MA, Palevski A, Solomon P, Potemski R, Tsai CS, Lebens JA, Vahala KJ. SELECTIVE EPITAXY OF GAAS, ALXGA1-XAS, AND INXGA1-XAS. Journal of Crystal Growth. 1991 ;107:116-128.
Han CC, Wang XZ, Lau SS, Potemski RM, Tischler MA, Kuech TF. THE TEMPERATURE-DEPENDENCE OF THE CONTACT RESISTIVITY OF THE SI/NI(MG) NONSPIKING CONTACT SCHEME ON P-GAAS. Journal of Applied Physics. 1991 ;69:3124-3129.
Han CC, Wang XZ, Lau SS, Potemski RM, Tischler MA, Kuech TF. THERMALLY STABLE AND NONSPIKING PD/SB(MN) OHMIC CONTACT TO P-GAAS. Applied Physics Letters. 1991 ;58:1617-1619.