TEMPERATURE AND DOPING-CONCENTRATION DEPENDENCE OF THE OSCILLATORY PROPERTIES OF THE PHOTOREFLECTANCE SPECTRA FROM GAAS GROWN BY MOLECULAR-BEAM EPITAXY

TitleTEMPERATURE AND DOPING-CONCENTRATION DEPENDENCE OF THE OSCILLATORY PROPERTIES OF THE PHOTOREFLECTANCE SPECTRA FROM GAAS GROWN BY MOLECULAR-BEAM EPITAXY
Publication TypeJournal Article
Year of Publication1991
AuthorsLu, CR, Anderson, JR, Stone, DR, Beard, WT, Wilson, RA, Kuech, TF, Wright, SL
JournalPhysical Review B
Volume43
Pagination11791-11797
Date PublishedMay
ISBN Number0163-1829
DOI10.1103/PhysRevB.43.11791