STUDY OF SILICON INCORPORATION FROM SIH4 IN GAAS-LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLARSINE

TitleSTUDY OF SILICON INCORPORATION FROM SIH4 IN GAAS-LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLARSINE
Publication TypeJournal Article
Year of Publication1994
AuthorsRedwing, JM, Simka, H, Jensen, KF, Kuech, TF
JournalJournal of Crystal Growth
Volume145
Pagination397-402
Date PublishedDec
DOI10.1016/0022-0248(94)91082-0