REDUCTION OF BACKGROUND DOPING IN METALORGANIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLGALLIUM AT LOW REACTOR PRESSURES

TitleREDUCTION OF BACKGROUND DOPING IN METALORGANIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLGALLIUM AT LOW REACTOR PRESSURES
Publication TypeJournal Article
Year of Publication1985
AuthorsKuech, TF, Potemski, R
JournalApplied Physics Letters
Volume47
Pagination821-823
ISBN Number0003-6951
DOI10.1063/1.95995