Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

TitleImpact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors
Publication TypeJournal Article
Year of Publication2002
AuthorsChu, RM, Zheng, YD, Zhou, YG, Han, P, Shen, B, Gu, SL
JournalApplied Physics a-Materials Science & ProcessingApplied Physics a (Materials Science Processing)
Volume75
Pagination387-389
Date PublishedSep
Accession Number561FD-0009