Erbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium

TitleErbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium
Publication TypeJournal Article
Year of Publication1998
AuthorsCederberg, JG, Culp, TD, Bieg, B, Pfeiffer, D, Winter, CH, Bray, KL, Kuech, TF
JournalJournal of Crystal Growth
Volume195
Pagination105-111
Date PublishedDec
DOI10.1016/s0022-0248(98)00582-x